LCR-Y110N / LCR-Y200A / CL-Y300A
In the mechanism of the photoresist composition, acid is formed in the photo acid generator that gets light from the exposure process, and the acid causes the resin's acid catalysed reaction in the photoresist. When using the negative photoresist, a bridging reaction occurs, and patterns are formed with solubility difference of the developer (development liquid) in the exposed and non-exposed areas through the reaction.