(Negative PR for 248nm process)-Target : Thickness 0.54um (Res. 180nm, 250nm)-Purpose of use : Implant & Etch Layer
(Negative PR for 248nm process)-Target : Thickness 0.30um (Res. 180nm)-Purpose of use : Implant Layer
(Positive PR for 248nm process)-Target : Thickness 0.54um (Res. 180nm, 250nm)-Purpose of use : Implant & Etch Layer
(Negative type Bump Photoresist)-Target : Thickness 50um (Res. 75um, Contact Hole)-Purpose of use : Negative Bump Photoresist
(Positive type Bump Photoresist)-Target : Thickness 6.0um (Res. 5um, L/S 1:1)-Purpose of use : Positive Bump Photoresist
(Positive PR for 365nm process)-Target : Thickness 3.5um (Res. 1.5um & 3.0um, 1:1)-Purpose of use : Implant & Metal Layer
(Positive PR for 365nm process)-Target : Thickness 1.7um (Res. 500nm, 1:1)-Purpose of use : Implant & Etch Layer / OLED Devices
(Positive PR for 365nm process)-Target : Thickness 1.3um (Res. 500nm, 1:1)-Purpose of use : Implant & Etch Layer / OLED Devices
(Positive PR for 365nm process)-Target : Thickness 1.1um (Res. 500nm, 1:1)-Purpose of use : Implant & Etch Layer / OLED Devices
(Negative PR for 365nm process)-Target : Thickness 2.0um ~ 6.0um (Bulk Pattern)-Purpose of use : Implant & Etch Layer / OLED Devices
(Negative PR for 365nm process)-Target : Thickness 1.0um (Res. 500nm, 1:1)-Purpose of use : Implant & Etch Layer / OLED Devices
(Negative PR for 365nm process)-Target : Thickness 6.0um (Res. 500nm, 1:1)-Purpose of use : Implant Layer
(Negative PR for 365nm process)-Target : Thickness 0.17um (Res. 500um, 1:1)-Purpose of use : Passivation Photoresist
(Negative PR for 365nm process)-Target : Thickness 0.1um (Res. 1.0um, 1:1)-Purpose of use : Passivation Photoresist
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