As a material used in the photo process, this is a material used to prevent pattern damage that occurs while rinsing with D.I. water, after the developer process.
(Hard-mask post etch residue cleaning solution)
-Improving the process margin by reducing the cap-leaning after etching
-Target : Prevent collapse & Improvement of LER-Purpose of use : ArF photoresist
-Target : Prevent collapse & Improvement of LER-Purpose of use : KrF photoresist
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