-Target : Prevent collapse & Improvement of LER-Purpose of use : ArF photoresist
-Target : Prevent collapse & Improvement of LER-Purpose of use : KrF photoresist
Using the SOD and TSA to accelerate the transition to oxide
Polysilicone etchant for Quartz tube
SiGe etchant
TMAH type developer for color filter resist
TMAH type developer
-Environmentally safe; PFOS/PFOA issue free-Low refractive index-pH controllable
(Bottom Anti Refective Coating Materials)-Target : Thickness 0.08um-Purpose of use : ArF BARC
(Bottom Anti Refective Coating Materials)-Target : Thickness 0.06um-Purpose of use : Gapfill BARC
(Bottom Anti Refective Coating Materials)-Target : Thickness 0.04um-Purpose of use : ArF BARC
(Bottom Anti Refective Coating Materials)-Target : Thickness 0.024um-Purpose of use : TSV package BARC – Ball grid array bumping process
(Positive PR TSV)-Target : Thickness 6.0um (Res. 6.0um, Contact Hole)-Purpose of use : i-Line Positive TSV Devices
(Negative PR for 248nm process)-Target : Thickness 0.54um (Res. 180nm, 250nm)-Purpose of use : Implant & Etch Layer
(Negative PR for 248nm process)-Target : Thickness 0.30um (Res. 180nm)-Purpose of use : Implant Layer
(Positive PR for 248nm process)-Target : Thickness 0.54um (Res. 180nm, 250nm)-Purpose of use : Implant & Etch Layer
(Negative type Bump Photoresist)-Target : Thickness 50um (Res. 75um, Contact Hole)-Purpose of use : Negative Bump Photoresist
(Positive PR for 365nm process)-Target : Thickness 1.1um (Res. 500nm, 1:1)-Purpose of use : Implant & Etch Layer / OLED Devices
(Positive PR for 365nm process)-Target : Thickness 1.3um (Res. 500nm, 1:1)-Purpose of use : Implant & Etch Layer / OLED Devices
(Positive PR for 365nm process)-Target : Thickness 1.7um (Res. 500nm, 1:1)-Purpose of use : Implant & Etch Layer / OLED Devices
(Positive PR for 365nm process)
(Positive PR for 365nm process)-Target : Thickness 3.5um (Res. 1.5um & 3.0um, 1:1)-Purpose of use : Implant & Metal Layer
(Positive PR for 248nm process)
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