Semiconductor 1 페이지

YCCHEM

Total 101

Equipment

-Hybrid Spin & Wet Station for Wafer Cleaning
-Monitoring System of H3PO4 concentration
Thinner

A solvent used to adjust viscosity or remove residues.
EUV Photoresist

We manufacture EUV photoresists for process applications with a film thickness range of 10nm to 100nm in relation to the 13.5nm wavelength.
In the EUV photoresist product line, we offer both positive and negative types, with optimized solutions for high sensitivity and low LER (Line Edge Roughness).
If you are looking for an EUV photoresist solution for project development, we will provide more specific data for the product line upon your inquiry.
ArF Photoresist

We manufacture ArF photoresists for process applications with a film thickness range of 0.2µm to 6.0µm in relation to the 193nm wavelength.In the ArF photoresist product line, we offer both positive and negative types, with solutions suitable for both dry and immersion processes.If you are looking for an ArF photoresist solution for project development, we will provide more specific data for the product line upon your inquiry.
Stripper

This is a material used to remove impurities remaining after the etch process.
UV Imprint Resin

NIL (Nanoimprint Lithography) offers the precise and low cost lithography technology for the polymer nano structure's high-throughput patternization.
Transparent Photoresist

For an organic insulator, the level of the leakage current is low, the hysteretic characteristics are low, the patterning is possible through cross-linking, and stability can be provided to an organic solvent. The inorganic interface layer protects the organic insulation film which is used as a sensor in the sensing environment, and provides a material that improves the bonding with an organic semiconductor.
Wafering

Wafering is a process of making silicon crystal into wafer. The process is generally performed by a multi-wire saw, which cuts multiple wafers concurrently of the same crystal. Eventually, the wafer is polished to the desired evenness and thickness
Spin On Carbon Hardmask

As the pattern size of a semiconductor element is reduced, if the thickness is reduced using the existing PR in implementing a pattern of less than 70nm, when the pattern is engraved at the depth required in the etch process, there is a possibility of the photoresist collapsing. To improve this, an SOC polymer is used. Although the pattern is engraved on the SOC polymer layer at the depth required for the each process using the photoresist, this can be used as a support material to prevent a photoresist collapse.
Rinsing Solution

As a material used in the photo process, this is a material used to prevent pattern damage that occurs while rinsing with D.I. water, after the developer process.
CMP

CMP (Chemical Mechanical Planarization or Polishing) is used in all semiconductor processes: making the insulation films different even due to element wiring or separating the element wiring by distributing the slurry containing hundreds of nm size polishing abrasives on the polishing pad surface. This induces the film's chemical reactions, and mechanically removing the transformed film surface by rotating the wafer-supporting polishing carrier and the polishing plate with the polishing pad attached at a high speed, when the wafer is stuck to the polishing pad with poly-urethane.
Promoter

This is a material used to accelerate oxidation.
Etchant

This is a material used to remove unnecessary metals existing on the PCB through chemical reactions.
Developer

As a material used in the last stage of the photo development process, this product is a material used in the process of forming patterns on the circuit by selectively removing the exposed areas and non-exposed areas.
TARC

The even pattern can only be formed if the reflectivity is maintained at less than 1%, while the exposure process is being carried out by the reduction of the pattern size of the semiconductor element (Top Anti Reflective Coating). This is used to improve the reflective light and diffused reflection occurrence within the photoresist film during the pattern forming using lithography by treating the prevention film of reflection on the top part upon exposure.
BARC

The even pattern can only be formed if the reflectivity is maintained at less than 1% while the exposure process is being carried out by the reduction of the pattern size of the semiconductor element (Top Anti Reflective Coating). During the pattern forming using lithography, the product is a light absorption agent used for the prevention of reflection and refined wave removal through the lower part of the film layer, and is an organic reflection prevention film.
TSV Thick Photoresist

We have developed and commercialized photoresists for various packaging processes including the latest technology. The photoresists for packaging processes can be used for extensive production technologies such as wafer level RDL and TSV.
KrF Photoresist

We manufacture KrF photoresists for process application with 0.30um to 12.0um of film thickness in relation to 248nm wavelength. In the KrF photoresist product line, we manufacture both positive and negative type photoresists. If you are looking for a krF photoresist solution for project development, we will provide more specific data for the product line when you make an inquiry to us.
Bump Photoresist

We supply positive and negative tone photoresists designed to meet the narrow pitch of related products, such as the recently developed wafer level packaging, MEMs, and 3D photolithography. The photoresist is compatible with various metals' plated chemicals including copper, pure tin, and nickel.
I-Line Photoresist

We manufacture i-line photoresist products for process applications with film thickness from 0.1um to 6.0um in relation to 365nm wavelength. We manufacture positive and negative type i-line photoresist solutions in the i-line photoresist product line-up. If you are looking for an i-line photoresist solution for project development, we will provide more specific data on the product line-up when you make an inquiry to us.

HEAD OFFICE, 1st, 2nd, 3rd Factory

174-12, Yuseori-gil, Seonnam-myeon, Seongju-gun, Gyeongsangbuk-do, South Korea. T. +82-54-930-2500 F. +82-54-931-8521

2nd R&D Center(Siheung)

50, Eungyenam-gil, Siheung-si, Gyeonggi-do, Korea T. +82-31-702-3941

4th Factory, SEONGJU GENERAL INDUSTRIAL COMPLEX

49, Seongjusaneopdanji-ro, Seongju-eup, Seongju-gun, Gyeongsangbuk-do, South Korea. T. +82-54-930-2800 F. +82-54-930-2811

Liaison Office(New Jersey U.S.A.)

460 Bergen Blvd. Suite 262. Palisades Park, New Jersey 07650, USA T. +1-201-944-0107

5th Factory, SEONGJU GENERAL INDUSTRIAL COMPLEX

144, Seongjusaneopdanji-ro 2gil, Seongju-eup, Seongju-gun, Gyeongsangbuk-do, South Korea.

↓

SCROLL

↑

TOP

YCCHEM

Equipment

Thinner

EUV Photoresist

ArF Photoresist

Stripper

UV Imprint Resin

Transparent Photoresist

Wafering

Spin On Carbon Hardmask

Rinsing Solution

CMP

Promoter

Etchant

Developer

TARC

BARC

TSV Thick Photoresist

KrF Photoresist

Bump Photoresist

I-Line Photoresist

NTS-300

AYCKP-7930

YEPR Series

YCHT-S902

HEAD OFFICE, 1st, 2nd, 3rd Factory

2nd R&D Center(Siheung)

4th Factory, SEONGJU GENERAL INDUSTRIAL COMPLEX

Liaison Office(New Jersey U.S.A.)

5th Factory, SEONGJU GENERAL INDUSTRIAL COMPLEX