作为光刻工艺中使用的材料,该材料用于显影(Developer)工艺后,以超纯水(D.I. water)清洗时防止图形损伤。
(Hard-mask post etch residue cleaning solution)
-Improving the process margin by reducing the cap-leaning after etching
-Target : Prevent collapse & Improvement of LER-Purpose of use : ArF photoresist
-Target : Prevent collapse & Improvement of LER-Purpose of use : KrF photoresist
卷轴
上移