CMP(化学机械平面化或抛光)将圆片贴附在以聚氨酯制造的抛光垫上的状态下,将含数百nm大小的抛光剂(有研磨作用的)的泥浆分散在抛光垫表面,诱导薄膜的化学反应,将贴有支持圆片的抛光载体与抛光垫的抛光板高速旋转,将重整的薄膜表面机械性去除,将因元件配线的绝缘膜段差弄平坦,并分离元件分离的半导体前工程可使用。
-Slurry for polishing semiconductor SiO2/Poly/Nitride layer.-Alternative of selective/non-selective polishing.
Positive PR for 248nm process
Rinsing Solution for EUV photoresist
High selective polishing slurry for bulk tungsten remove and minimum erosion.
Tunable selective polishing slurry for the tungsten/oxide layer and minimum dishing.
CMP slurry for Tungsten buffing step
Copper CMP slurry for barrier metal layer planarization
Copper CMP slurry for bulk removal
Copper CMP slurry for TSV & WLP
Poly-Si removal slurry
Carbon hard mask layer removal slurry
-Low selective polishing slurry for Tungsten buffering-Low scratch defects due to the special protective abrasive-high purity slurry solution
-High selective polishing slurry for Tungsten bulk removal effectively.
Contamonation remove and corrosion control after the CMP process.
Hard-mask post etch residue cleaning solution.
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