(底部抗反射涂料)随着半导体元件模型大小减少,在进行曝光工程时,反射率最低应维持1%以内,才能形成均等的模型,利用光刻技术形成模型中曝光时,根据底部膜层防止光反射以及去除定在波用的吸光剂与包含其在内的有机反射防止膜。
(Bottom Anti Refective Coating Materials)
(Bottom Anti Refective Coating Materials)-Target : Thickness 0.08um-Purpose of use : ArF BARC
(Bottom Anti Refective Coating Materials)-Target : Thickness 0.06um-Purpose of use : Gapfill BARC
(Bottom Anti Refective Coating Materials)-Target : Thickness 0.04um-Purpose of use : ArF BARC
(Bottom Anti Refective Coating Materials)-Target : Thickness 0.024um-Purpose of use : TSV package BARC – Ball grid array bumping process
卷轴
上移