Tunable selective polishing slurry for the tungsten/oxide layer and minimum dishing.
(Negative PR for 365nm process)-Target : Thickness 0.1um (Res. 1.0um, 1:1)-Purpose of use : Passivation Photoresist
(Wire-saw cutting fluid)
(Negative PR for 365nm process)-Target : Thickness 0.17um (Res. 500um, 1:1)-Purpose of use : Passivation Photoresist
(Negative PR for 365nm process)-Target : Thickness 6.0um (Res. 500nm, 1:1)-Purpose of use : Implant Layer
(Wafer cleaning solution)
(Negative PR for 365nm process)-Target : Thickness 1.0um (Res. 500nm, 1:1)-Purpose of use : Implant & Etch Layer / OLED Devices
(Negative PR for 365nm process)-Target : Thickness 2.0um ~ 6.0um (Bulk Pattern)-Purpose of use : Implant & Etch Layer / OLED Devices
Hybrid Spin & Wet Station for Wafer Cleaning
Monitoring System of H3PO4 concentration
CMP slurry for Tungsten buffing step
Copper CMP slurry for barrier metal layer planarization
Copper CMP slurry for bulk removal
Copper CMP slurry for TSV & WLP
Poly-Si removal slurry
Carbon hard mask layer removal slurry
YSPS-30 is Planarization
YSHE-31, YSHS-20, YSHS-31, YSHE-200, YSHS-04 is High etch resistance
YSHS-13, YSHS-19 is Spin on Hot-temperature carbon hardmask.
(Hard-mask post etch residue cleaning solution)
(Metal-oxide resist developer)
卷轴
上移