-Target : Thickness 0.19um-Purpose of use : CIS device"
-Target : Thickness 0.13um-Purpose of use : Mertal layer"
Contamonation remove and corrosion control after the CMP process.
Hard-mask post etch residue cleaning solution.
Tunable selective polishing slurry for the tungsten/oxide layer and minimum dishing.
High selective polishing slurry for bulk tungsten remove and minimum erosion.
Rinsing Solution for EUV photoresist
Positive PR for 248nm process
-Slurry for polishing semiconductor SiO2/Poly/Nitride layer.-Alternative of selective/non-selective polishing.
-Improving the process margin by reducing the cap-leaning after etching
Positive PR for 365nm process
-Target : Prevent collapse & Improvement of LER-Purpose of use : ArF photoresist
-Target : Prevent collapse & Improvement of LER-Purpose of use : KrF photoresist
Using the SOD and TSA to accelerate the transition to oxide
Polysilicone etchant for Quartz tube
SiGe etchant
TMAH type developer for color filter resist
TMAH type developer
-Environmentally safe; PFOS/PFOA issue free-Low refractive index-pH controllable
(Bottom Anti Refective Coating Materials)-Target : Thickness 0.08um-Purpose of use : ArF BARC
(Bottom Anti Refective Coating Materials)-Target : Thickness 0.06um-Purpose of use : Gapfill BARC
(Bottom Anti Refective Coating Materials)-Target : Thickness 0.04um-Purpose of use : ArF BARC
(Bottom Anti Refective Coating Materials)-Target : Thickness 0.024um-Purpose of use : TSV package BARC – Ball grid array bumping process
(Positive PR TSV)-Target : Thickness 6.0um (Res. 6.0um, Contact Hole)-Purpose of use : i-Line Positive TSV Devices
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