YCAR-Series

(Bottom Anti Refective Coating Materials)

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AYCTN-4813

(Metal-oxide resist thinner)

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YCEM-Series

(Phrotoresist for EUV Process)

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AYCAF-Series

(Dry PR for 193nm process)

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YCAF-5512/YCAF-5508

(Immersion PR for 193nm process)

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YPP-6000

(Positive type Bump Photoresist)
-Target : Thickness 6.0um (Res. 5um, L/S 1:1)
-Purpose of use : Positive Bump Photoresist

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YGR-8100AL / YGR-8200AL

Metal stripper (Single type)

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YGR-4100AL

Metal stripper (Batch type)

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YMR-1600 / YMR-1700

Etch 공정 후 존재하는 불순물들을 제거하기 위하여 활용하는 물질입니다.

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YNIL-HR

-Organic-Inorganic Hybrid, Heat-resistance,
-Easy release, Transparency

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YNIL-M1 / M2 / M3

-Transparency, Easy release, Young's modulus(100~1000MPa)
-Dimension error < 5%(tunable shrinkage 1~5% ), Contact angle(60°~90°),
-Flexible & Bendable

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YNIL-R1 / R2 / R3

UV curable, Inkjet type, Transparency, Tunable viscosity, Good wetting, Strong adhesion force to the wafer and the polymer substrate, Residual layer: Below 50nm

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YTNP-2030

Transparent Photoresist

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YTNP-2015

Transparent Photoresist

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YTNP-2005

Transparent Photoresist

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SW-300

-Low selective polishing slurry for Tungsten buffering
-Low scratch defects due to the special protective abrasive
-high purity slurry solution

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YCHT-S902, YCLW-S804

-High selective polishing slurry for Tungsten bulk removal effectively.

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AYCKP-9160

-Target : Thickness 6.0um (Res. 5.0um, Contact Hole)
-Purpose of use : KrF Positive TSV Devices

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YMCA-M128

Word-line(Mo/TiN) recess wet-etch solution.

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YMCA-W096

Word-line(W/TiN) recess wet-etch solution.

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YS-210

-Target : Thickness 0.21um
-Purpose of use : Normal SOC "

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YPCC-2000

​Contamonation remove and corrosion control after the CMP process. 

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YSC-100

Hard-mask post etch residue cleaning solution.

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ALS-Y957

-Improving the process margin by reducing the cap-leaning after etching

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