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Semiconductor
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Semiconductor
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I-Line Photoresist
Bump Photoresist
KrF Photoresist
TSV Thick Photoresist
BARC
TARC
Developer
Etchant
Promoter
Rinsing Solution
Spin On Carbon Hardmask
CMP
Wafering
A Total of
5
hit(s)
Subject
Contents
Name
BARC
The even pattern can only be formed if the reflectivity is maintained at less than 1% while the exposure process is being carried out by the reduction of the pattern size of the semiconductor element (Top Anti Reflective Coating). During the pattern forming using lithography, the product is a light absorption agent used for the prevention of reflection and refined wave removal through the lower part of the film layer, and is an organic reflection prevention film.
YA-800
-Target : Thickness 0.08um
-Purpose of use : ArF BARC
YA-600A
-Target : Thickness 0.06um
-Purpose of use : Gapfill BARC
YA-400
-Target : Thickness 0.04um
-Purpose of use : ArF BARC
YCB-240
-Target : Thickness 0.024um
-Purpose of use : TSV package BARC – Ball grid array bumping process
1
